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| M54HC253 RAD-HARD DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT s s s s s s s s s s s HIGH SPEED: tPD = 16ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 253 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9408-058 DILC-16 FPC-16 ORDER CODES PACKAGE DILC FPC FM M54HC253D M54HC253K EM M54HC253D1 M54HC253K1 DESCRIPTION The M54HC253 is an high speed CMOS DUAL 4 CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. Each of these data (1C0-1C3, 2C0-2C3) is selected by the two address inputs A and B. Separate strobe inputs (1G, 2G) are provided for each of the two four-line sections. The strobe input (nG) can be used to inhibit the data output; the output of M54HC253 is a high impedance while the strobe input is held high. All inputs are equipped with protection circuits against static discharge and transient excess voltage. PIN CONNECTION April 2004 1/10 M54HC253 IEC LOGIC SYMBOLS INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N 1, 15 14, 2 6, 5, 4, 3 7, 9 10, 11, 12, 13 8 16 SYMBOL 1G, 2G A, B NAME AND FUNCTION Output Enable Inputs Common Data Select Inputs 1C0 to 1C3 Data Inputs From Source 1 1Y, 2Y 3 State Multiplexer Outputs 2C0 to 2C3 Data Inputs From Source 2 GND Ground (0V) VCC Positive Supply Voltage TRUTH TABLE SELECT INPUTS B X L L L L H H H H X : Don't Care Z : High Impedance DATA INPUTS C0 X L H X X X X X X C1 X X X L H X X X X C2 X X X X X L H X X C3 X X X X X X X L H STROBE OUTPUT Y G H L L L L L L L L Z L H L H L H L H A X L L H H L L H H 2/10 M54HC253 LOGIC DIAGRAM This logic diagram has not be used to estimate propagation delays ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 300 -65 to +150 265 Unit V V V mA mA mA mA mW C C ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied 3/10 M54HC253 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns DC SPECIFICATIONS Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 IO=-20 A IO=-20 A IO=-20 A IO=-4.0 mA IO=-5.2 mA IO=20 A IO=20 A IO=20 A IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND TA = 25C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 0.1 0.5 4 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 1 5 40 Typ. Max. Value -40 to 85C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 1 5 80 A A A V V Max. -55 to 125C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage VIL V VOH ICC 4/10 M54HC253 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns) Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25C Min. Typ. 30 8 7 48 15 12 68 20 16 36 12 9 22 11 9 Max. 75 15 13 115 23 20 150 30 26 100 20 17 100 20 17 Value -40 to 85C Min. Max. 95 19 16 145 29 25 190 38 32 125 25 21 125 25 21 -55 to 125C Min. Max. 110 22 19 175 35 30 225 45 38 150 30 26 150 30 26 ns Unit tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time (Cn - Y) tPLH tPHL Propagation Delay Time (A, B - Y) tPZL tPZH High Impedance Output Enable Time (G - Y) tPLZ tPHZ High Impedance Output Disable Time (G - Y) ns ns R1 = 1K ns R1 = 1K ns CAPACITIVE CHARACTERISTICS Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25C Min. Typ. 5 58 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit CIN CPD Input Capacitance Power Dissipation Capacitance (note 1) 1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4(per circuit) 5/10 M54HC253 TEST CIRCUIT TEST tPLH, tPHL tPZL, tPLZ tPZH, tPHZ CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1K or equivalent RT = ZOUT of pulse generator (typically 50) SWITCH Open VCC GND 6/10 M54HC253 WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle) 7/10 M54HC253 DILC-16 MECHANICAL DATA mm. DIM. MIN. A a1 a2 B b b1 D e e1 e2 e3 F I K L 10.90 1.14 17.65 7.62 7.29 2.1 3.00 0.63 1.82 0.40 0.20 20.06 7.36 0.45 0.254 20.32 7.62 2.54 17.78 7.87 7.49 17.90 8.12 7.70 3.83 12.1 1.5 0.429 0.045 0.695 0.300 0.287 0.88 TYP MAX. 2.71 3.70 1.14 2.39 0.50 0.30 20.58 7.87 MIN. 0.083 0.118 0.025 0.072 0.016 0.008 0.790 0.290 0.018 0.010 0.800 0.300 0.100 0.700 0.310 0.295 0.705 0.320 0.303 0.151 0.476 0.059 0.035 TYP. MAX. 0.107 0.146 0.045 0.094 0.020 0.012 0.810 0.310 inch 0056437F 8/10 M54HC253 FPC-16 MECHANICAL DATA mm. DIM. MIN. A B C D E F G H L M N 0.38 6.0 18.75 0.33 0.38 4.31 22.0 0.43 6.75 9.76 1.49 0.102 8.76 0.127 8.89 1.27 0.43 0.48 0.015 0.237 0.738 0.013 0.015 0.170 0.867 0.017 TYP 6.91 9.94 MAX. 7.06 10.14 1.95 0.152 9.01 MIN. 0.266 0.384 0.059 0.004 0.345 0.005 0.350 0.050 0.017 0.019 TYP. 0.272 0.392 MAX. 0.278 0.399 0.077 0.006 0.355 inch F G D H 16 9 A N L 1 8 H E M C B 0016030E 9/10 M54HC253 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10 |
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